Ion implantation : basics to device fabrication

by Emanuele Rimini

Ion Implantation: Basics to Device Fabrication is a collection of research dealing with several aspects of ion implantation, including basic information on the physics of devices, ion implanters, channeling implants, yield, damage and its annealing, in addition to a host of other topics. Particular attention has been paid to those techniques that provide two-dimensional profiles of damage and of dopants, a careful treatment of silicon based devices, threshold voltage control, shallow junctions, minority carrier lifetime control by metallic ion implants, and high energy implants is given in this work. This book, based on a course preceding the biannual Ion Implantation Technology Conference, is a valuable reference for physicists, chemists, materials scientists, processing, device production, device design, and ion beam engineers interested in any aspect of ion implantation, as well as a secondary text for a graduate course on the subject.

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[目次]

  • Preface. List of Tables. 1. Semiconductor Devices. 2. Ion Implanters. 3. Range Distribution. 4. Radiation Damage. 5. Annealing and Secondary Defects. 6. Analytical Techniques. 7. Silicon Based Devices. 8. Ion Implantation in Compound Semiconductor and Buried Layer Synthesis. Selected References. References. Index.

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この本の情報

書名 Ion implantation : basics to device fabrication
著作者等 Rimini, E.
Rimini Emanuele
シリーズ名 The Kluwer international series in engineering and computer science
出版元 Kluwer Academic Publishers
刊行年月 c1995
ページ数 xii, 393 p.
大きさ 25 cm
ISBN 0792395204
NCID BA24882495
※クリックでCiNii Booksを表示
言語 英語
出版国 アメリカ合衆国
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